Multi-pass programming in a memory device

ABSTRACT

A method for programming a memory device, a memory device, and a memory system are provided. According to at least one such method, a first programming pass generates a plurality of first programming pulses to increase the threshold voltages of target memory cells to either a pre-program level or to the highest programmed threshold. A second programming pass applies a plurality of second programming pulses to the target memory cells to increase their threshold voltages only if they were programmed to the pre-program level. The target memory cells programmed to their respective target threshold levels during the first pass are not programmed further.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to memory devices and in a particular embodiment the present invention relates to non-volatile memory devices.

BACKGROUND OF THE INVENTION

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic devices. There are many different types of memory including random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and flash memory.

A flash memory is a type of memory that can be erased and reprogrammed in blocks instead of one byte at a time. A typical flash memory comprises a memory array, which includes a large number of memory cells. Each of the memory cells includes a floating gate field-effect transistor capable of holding a charge. The cells are usually grouped into blocks. Each of the cells within a block can be electrically programmed on a random basis by charging the floating gate. The data in a cell is determined by the presence or absence of the charge in the floating gate. The charge can be removed from the floating gate by a block erase operation.

Each memory cell can be programmed as a single bit per cell (i.e., single level cell—SLC) or multiple bits per cell (i.e., multilevel cell—MLC). Each cell's threshold voltage (V_(t)) determines the data that is stored in the cell. For example, in a single bit per cell, a V_(t) of 0.5V can indicate a programmed cell while a V_(t) of −0.5V might indicate an erased cell. The multilevel cell may have multiple V_(t) ranges that each indicates a different state. Multilevel cells take advantage of the analog nature of a traditional flash cell by assigning a bit pattern to a specific voltage distribution for the cell. This technology permits the storage of two or more bits per cell, depending on the quantity of voltage ranges assigned to the cell.

FIG. 1 illustrates a typical prior art V_(t) distribution where the vertical axis is the quantity of cells and the horizontal axis is the threshold voltage V_(t). L0 101 is typically referred to as the erased state and has a negative voltage. The remaining positive states are labeled L1 102, L2 103, and L3 104 and are programmed from the erased state 101.

As illustrated in FIG. 2, conventional MLC programming uses incrementally increasing (e.g., ΔV) programming pulses 201 that are applied to the access lines (e.g., word lines) of the memory cell array to achieve discrete levels of V_(t) for the cells in the array. Between each program pulse, a verify 203 is performed to determine if the cell's target V_(t) has been achieved. Memory cells that have reached their target V_(t) are inhibited from further programming during subsequent pulses by biasing of the data line (e.g., bit line).

The variations in each V_(t) distribution width 110 is an important parameter to control. The tightest possible distribution is desired, as shown in FIG. 1, in order to produce greater spacing 115 between each of the states. This enables easier discrimination between states since the possibility of a higher voltage of one distribution overlapping a lower V_(t) of the next distribution is reduced. A smaller programming voltage step (ΔV) produces a tighter distribution. However, the smaller programming voltage steps require a longer programming time. Thus, there is a trade-off between tighter distributions and programming speed.

Floating gate-to-floating gate capacitive coupling also affects distribution width. This coupling effect results from increasing density of a memory device by decreasing the distance between memory cells on the memory die. The decreased distance between cells increases the ability of each cell to affect the V_(t) distribution of adjacent cells.

Program disturb is yet another phenomenon that can affect the V_(t) distribution size. As mentioned earlier, memory cells that have achieved their target V_(t) are inhibited from further programming. However, additional programming pulses having high programming voltages necessary for further programming of higher states can still increase the threshold voltages of already programmed memory cells. The increased threshold voltages result in wider threshold distributions.

For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a way to reduce V_(t) distribution width and program disturb without impacting the programming throughput of the memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows typical prior art threshold voltage distribution diagram.

FIG. 2 shows a series of prior art program and verify pulses.

FIG. 3 shows schematic diagram of one embodiment of a non-volatile memory array.

FIG. 4 shows one embodiment of a threshold distribution in accordance with a first pass programming step.

FIG. 5 shows one embodiment of a threshold distribution in accordance with a second pass programming step.

FIG. 6 shows a comparison between first pass programming pulse incremented voltages and second pass programming pulse incremented voltages.

FIG. 7 shows a flowchart of one embodiment of a multi-pass programming method.

FIG. 8 shows a simplified block diagram of one embodiment of a memory system of the present invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference is made to the accompanying drawings that form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof.

FIG. 3 illustrates a schematic diagram of a portion of a NAND architecture memory array comprising series strings of non-volatile memory cells on which the embodiments of the subsequently discussed data collection and compression/decompression can operate. While the subsequent discussions refer to a NAND memory device, the present embodiments are not limited to such an architecture but can be used in other memory device architectures as well. For example, alternate embodiment arrays could be organized in NOR or AND architectures.

The memory array is comprised of an array of non-volatile memory cells 301 (e.g., floating gate) arranged in columns such as series strings 304, 305. Each of the cells 301 is coupled drain to source in each series string 304, 305. A word line WL0-WL31 that spans across multiple series strings 304, 305 is connected to the control gates of each memory cell in a row in order to bias the control gates of the memory cells in the row. The bit lines BL1, BL2 are eventually connected to sense amplifiers (not shown) that detect the state of each cell by sensing current on a particular bit line.

Each series string 304, 305 of memory cells is coupled to a source line 306 by a source select gate transistor 316, 317 and to an individual bit line BL1, BL2 by a drain select gate transistor 312, 313. The source select gate transistors 316, 317 are controlled by a source select gate control line SG(S) 318 coupled to their control gates. The drain select gate transistors 312, 313 are controlled by a drain select gate control line SG(D) 314.

Each memory cell can be programmed as a single level cell (SLC) or multilevel cell (MLC). Each cell's threshold voltage (V_(t)) is indicative of the data that is stored in the cell. For example, in an SLC, a V_(t) of 0.5V might indicate a programmed cell while a V_(t) of −0.5V might indicate an erased cell. The MLC has multiple V_(t) ranges that each indicate a different state. Multilevel cells can take advantage of the analog nature of a traditional flash cell by assigning a bit pattern to a specific voltage range stored on the cell. This technology permits the storage of two or more bits per cell, depending on the quantity of voltage ranges assigned to the cell.

The memory array can be organized as memory blocks. The quantity of memory blocks is typically determined by the size of the memory device (i.e., 512 MB, 1 GB). In one embodiment, each memory block programmed in an SLC manner is comprised of 64 pages. In another embodiment, a memory block programmed in a MLC manner is comprised of 128 pages. Each page is typically comprised of 2048 bytes of data.

FIG. 4 illustrates a threshold voltage distribution for three possible programmed states in a memory cell. These states are labeled L1, L2, and L3. L0 is considered the erased state and typically has a negative threshold voltage. The three states shown in FIG. 4 are for illustration purposes only as alternate embodiments can have more or less than three programmed states.

The three programmed states L1-L3 are representative of digital data programmed into a memory cell. For example, L1 might represent a “01” pattern, L2 a “10” pattern, and L3 a “00” pattern. Alternate embodiments can use other digital patterns. Thus, to program a “01” to a memory cell, that particular cell's threshold voltage is moved from the erased state (e.g., “11”) having a negative threshold voltage to the threshold voltage at L1. This is accomplished using the programming embodiments described subsequently.

During the programming operation, the selected word line for the memory cell to be programmed is biased with a series of incrementing voltage programming pulses. The series of pulses start at an initial voltage that is greater than a predetermined programming voltage (e.g., 16V). After each programming pulse, a verification operation is performed to determine if the cell's threshold voltage V_(t) has increased to the target programmed level (e.g., 0.5V). In one embodiment, the verification operation uses a word line voltage of 0V on the selected word line.

During the programming operation, the unselected word lines for the remaining memory cells of the memory block being programmed are typically biased at a voltage (e.g., 10V) that is less than the programming voltage. In one embodiment, the unselected word line voltage can be any voltage above ground potential. Each of the memory cells is programmed in a substantially similar manner.

The bit line, during the programming operation, is biased at a low voltage such as ground. The higher the bit line voltage, the slower the programming of the memory cell. A voltage of V_(CC) on the bit line will inhibit programming of the memory cells coupled to that particular bit line.

FIG. 4 illustrates the first pass of a programming operation. The memory cells start at the L0 level (i.e., erased state of “11”). During the first pass, the memory cells are programmed to a pre-L1 or pre-L2 level. The first pass also programs the top-most level L3 to its target V_(t) without using a pre-L3 level. The first pass uses large ΔV increments between programming pulses. This concept is illustrated in FIG. 6.

FIG. 6 shows that during the first programming pass, the ΔV increment to the next programming pulse is greater than the ΔV used during the second programming pass. Thus, ΔV_(1st pass)>ΔV_(2nd pass).

The top-most level L3 does not require a pre-L3 programming level since it can tolerate a wider distribution than the lower levels. This is due to the fact that the top-most level does not have any remaining levels with which it can interfere. Thus, the L3 level can use only the larger ΔV and be programmed more quickly than the remaining cells.

In one embodiment, ΔV_(1st pass) is optimized for programming L3. In other words, ΔV st pass is a voltage that programs L3 the most efficiently. This can be accomplished using empirical testing of different voltages during the manufacturing and testing process. This voltage is then used during the first pass for also programming the pre-L1 and pre-L2 levels.

In one embodiment, the starting voltage 601 of the programming operation, as illustrated in FIG. 6, is set conservatively. This reduces the chances of the memory cells being programmed to the L1 level from overshooting their target V_(t).

Programming speed is a function of the number of program/erase cycles that a memory cell has experienced. If the memory cells are uncycled, the first few programming pulses may not cause a V_(t) shift and are thus wasted. In the present programming method, the voltage at which the first pre-L1 cell passes the program verify operation is recorded. This voltage, or some offset of this voltage, can then be used as the starting voltage during the second programming pass.

During the first programming pass, once the pre-L1 level has been programmed, ΔV_(1st pass) can be altered or increased to suit the needs of programming the pre-L2 level. Similarly, once the pre-L2 level has been programmed, ΔV_(1st pass) can be altered or increased to suit the needs of programming the L2 level.

During the second programming pass, once the L1 level has been programmed, ΔV_(2nd pass) can be altered or increased to suit the needs of programming L2. Altering the program step voltage after the pre-levels or programmed levels have been reached can be done with alternate embodiments having more than four levels of threshold voltages.

FIG. 5 illustrates the second pass of the programming operation. In the second programming pass, the starting voltage 602 as shown in FIG. 6, has been determined during the first programming pass as described previously. Also during the second programming pass, the ΔV is less in order to fine tune the movement of the pre-L1 or pre-L2 levels to the target L1 or target L2 levels.

The shift in the threshold voltages from the pre-L1 and pre-L2 levels is relatively small compared to the initial programming from the erased level to the pre-levels. Thus the floating gate-to-floating gate coupling aggression will also be relatively small. Also, the program disturb induced 501 on L3 while finishing the programming of either the L1 or the L2 levels is relatively small.

Reference is made to the programming pulses of FIG. 6 while describing the programming method illustrated in the flowchart of FIG. 7. The method begins with an erase operation performed on the memory cell block comprising the target memory cells to be programmed 701. In one embodiment, the erase operation is comprised of biasing the word lines to be erased with a large negative voltage pulse. An erase verify operation 703 is then performed. If the memory cell block is not erased, the erase pulses continue until the erase verify operation passes.

The first programming pass begins at the conservative programming voltage 601 and increases by ΔV_(1st pass) for every subsequent programming pulse. Thus, the first pass programming pulse is generated 705 at the start voltage 601. A program verify operation is then performed 707 to determine if the memory cell is programmed to the pre-level (e.g., pre-L1 or pre-L2) or the highest target level. If the program verify 707 fails, the memory cell has not yet reached the threshold voltage for either pre-level or the highest target level. The programming voltage is then increased by ΔV_(1st pass) 706. This first pass programming operation 705, 706, 707 is performed until the memory cell reaches its pre-level threshold voltage or the highest target level.

If the program verify 707 passes, the second pass programming pulses are generated. The voltage for the first programming pulse 602 for the second pass is determined from the first programming pass as described previously. This programming pulse is then generated 709 only for the memory cells programmed to their pre-level since the target memory cell programmed to the highest target level is done programming. A program verify operation is performed to determine if the memory cell has reached its target program level 711. If the memory cell has not reached the threshold voltage for this level, the programming pulse is increased by ΔV_(2nd pass) 710 and the second pass programming operation 709, 710, 711 is repeated until the memory cell being programmed reaches the target level. At this point, the programming operation has been completed 713.

FIG. 8 illustrates a functional block diagram of a memory system 820 that includes a memory device 800. The memory device 800 has been simplified to focus on features of the memory that are helpful in understanding the present embodiments for memory programming. The memory device 800 is coupled to an external system controller 810. The controller 810 may be a microprocessor or some other type of control circuitry.

The memory device 800 includes an array 830 of non-volatile memory cells, such as the one illustrated in FIG. 3 and discussed previously. The memory array 830 is arranged in banks of word line rows and bit line columns. In one embodiment, the columns of the memory array 830 are comprised of series strings of memory cells. As is well known in the art, the connections of the cells to the bit lines determines whether the array is a NAND architecture, an AND architecture, or a NOR architecture.

Address buffer circuitry 840 is provided to latch address signals provided through the I/O circuitry 860. Address signals are received and decoded by a row decoder 844 and a column decoder 846 to access the memory array 830. It will be appreciated by those skilled in the art, with the benefit of the present description, that the number of address input connections depends on the density and architecture of the memory array 830. That is, the number of addresses increases with both increased memory cell counts and increased bank and block counts.

The memory device 800 reads data in the memory array 830 by sensing voltage or current changes in the memory array columns using sense amplifier circuitry 850. The sense amplifier circuitry 850, in one embodiment, is coupled to read and latch a row of data from the memory array 830. I/O circuitry 860 is included for bidirectional data communication as well as address communication over a plurality of data connections 862 with the controller 810. Write circuitry 855 is provided to program data to the memory array 830.

Memory control circuitry 870 decodes signals provided on control connections 872 from the controller 810. These signals are used to control the operations on the memory array 830, including data read, data write (program), and erase operations. The memory control circuitry 870 may be a state machine, a sequencer, or some other type of controller to generate the memory control signals. In one embodiment, the memory control circuitry 870 is configured to transfer data to the memory array 830 for execution of the programming embodiments discussed previously. The memory control circuitry 870 is further configured to read data from the memory array 830.

The memory device illustrated in FIG. 8 has been simplified to facilitate a basic understanding of the features of the memory. A more detailed understanding of internal circuitry and functions of flash memories are known to those skilled in the art.

CONCLUSION

In summary, one or more embodiments of the present invention provide a method for programming multilevel cell solid state memory devices in order to produce narrow V_(t) distributions and mitigate floating gate-to-floating gate coupling without impacting programming speed. This can be accomplished by programming, during a first programming pass, memory cells having lower target levels to a pre-level and memory cells having an upper level to its target level. A second programming pass programs the lower levels to their associated target levels. The first programming pass programs the memory cell at a faster program rate than the second programming pass due to the greater ΔV between the programming pulses in the first programming pass.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations of the invention will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations of the invention. It is manifestly intended that this invention be limited only by the following claims and equivalents thereof. 

1. A method for programming a memory cell to a target program level, the method comprising: changing a programmed level for the memory cell to one of a first program pre-level of at least one lower program pre-level or a highest program level, each of the at least one lower program pre-levels associated with a different target program level; and only if the target program level is associated with one of the at least one lower program pre-levels, changing the first program pre-level to its associated target program level.
 2. The method of claim 1 and further including erasing the memory cell.
 3. The method of claim 2 wherein erasing the memory cell comprises causing the memory cell to have a negative threshold voltage.
 4. The method of claim 1 wherein changing the programmed level comprises applying a first plurality of programming pulses to a control gate of the memory cell wherein a voltage of each subsequent programming pulse is increased from a previous voltage by a first increment voltage.
 5. The method of claim 4 wherein changing the first program pre-level to its associated target program level comprises applying a second plurality of programming pulses to the control gate wherein a voltage of each subsequent programming pulse is increased from a previous voltage by a second increment voltage wherein the second increment voltage is less than the first increment voltage.
 6. The method of claim 5 and further comprising performing a verify operation between each program pulse.
 7. The method of claim 1 wherein the memory cell is programmed to the first program pre-level from an erased level.
 8. The method of claim 1 wherein the plurality of program pre-levels is comprised of the highest program level and a plurality of lower program pre-levels that are all less than the highest program level.
 9. The method of claim 1 wherein each target program level is associated with a different digital pattern.
 10. A method for programming a memory cell to a target threshold voltage, the method comprising: changing an initial threshold voltage for the memory cell to a first threshold voltage of a plurality of threshold voltages comprising a highest threshold voltage and a plurality of lower threshold voltages, each of the plurality of lower threshold voltages associated with a different target threshold voltage; and changing the first threshold voltage to its associated target threshold voltage only if the target threshold voltage is one of the plurality of lower threshold voltages.
 11. The method of claim 10 wherein the initial threshold voltage is a negative threshold voltage.
 12. The method of claim 11 wherein changing the initial threshold voltage comprises increasing the negative threshold voltage to a positive threshold voltage that is less than the target threshold voltage associated with the positive threshold voltage.
 13. The method of claim 10 wherein changing the initial threshold voltage to the first threshold voltage is accomplished at a faster rate than changing the first threshold voltage to it associated target threshold voltage.
 14. A method for programming a multi-level cell memory device, the method comprising: generating first pass programming pulses that increase a threshold voltage for each target memory cell to either a pre-programmed level or a highest target threshold, the first pass programming pulses increased by a first ΔV from a previous first pass programming pulse; and generating second pass programming pulses to increase the threshold voltage only for the target memory cells programmed to the pre-programmed level, the second pass programming pulses increased by a second ΔV from a previous second pass programming pulse wherein the second ΔV is less than the first ΔV.
 15. The method of claim 14 wherein a voltage at which a target memory cell programmed to a pre-programmed level passes a program verify operation is used as an initial voltage for the second pass programming pulses.
 16. The method of claim 14 and further including performing a program verify operation between each of the first pass programming pulses and the second pass programming pulses.
 17. The method of claim 14 wherein the first ΔV is altered in response to the threshold voltage reaching either the pre-programmed level or the highest target threshold.
 18. The method of claim 14 wherein the second ΔV is altered in response to the threshold voltage reaching a target threshold voltage.
 19. A memory device comprising: a memory array comprising a plurality of non-volatile memory cells; and control circuitry coupled to the memory array and configured to control operation of the memory array, the control circuitry further configured to control generation of first programming pulses to target memory cells of the memory array to increase their threshold voltages to either a pre-programmed level or a target threshold voltage that is greater than other target threshold voltages for a target memory cell and the control circuitry further configured to control generation of second programming pulses to increase threshold voltages of only the target memory cells programmed to their pre-programmed level.
 20. The memory device of claim 19 wherein the memory array is comprised of a NAND architecture.
 21. A memory system comprising: a controller configured to control operation of the memory system; and a non-volatile memory device, coupled to the controller, that operates in response to the controller, the non-volatile memory device comprising: a memory array comprising a plurality of memory cells; and control circuitry coupled to the memory array and configured to control programming of the memory array wherein the control circuitry is configured to control generation of a plurality of first pass programming pulses for programming target memory cells to one of a pre-level that is less than an associated target level or a highest target level that is greater than other target levels for a target memory cell, the control circuitry further configured to control generation of a plurality of second pass programming pulses that program only the target memory cells that are programmed to the pre-level, wherein the target memory cells programmed to the highest target level are not programmed by the second pass programming pulses.
 22. The memory system of claim 21 wherein the control circuitry is further configured to control bias of a bit line with a voltage that either slows or inhibits programming of the target memory cells in response to a threshold voltage of each of the target memory cells.
 23. The memory system of claim 21 wherein the control circuitry is further configured to generate an initial programming voltage for the second pass programming pulses in response to a voltage that results in a target memory cell to be programmed to its pre-level. 